Amorphous As2S3 films are real-time photographic materials for phase holograms. This work focuses an the phase shift in As2S3 films as a function of the exposure. A measuring method for the phase shift response simultaneous to the exposure is presented. A relative displacement determination of interferometric patterns allows precise measurements insensitive to changes of experimental conditions. The phase shift dependence on the intensity of the writing beam is evaluated for two different films. As the result a linear phase shift response is obtained with a dynamic range of nearly 9. It is independent of the intensity over four orders of magnitude. The results are proofed by diffraction efficiency measurements.
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